Identify the correct statement related to the P-N junction diode.

V-I characteristics of a PN junction diode

Forward Bias:

When the p-type side of the diode is connected to a higher potential than the n-type side, the diode is forward-biased. This reduces the width of the depletion region, making it easier for electrons to flow from the n-type side to the p-type side and holes to flow from the p-type side to the n-type side, resulting in a large forward current. 

Reverse Bias:

When the n-type side of the diode is connected to a higher potential than the p-type side, the diode is reverse-biased. This widens the depletion region, making it difficult for the majority carriers to cross the junction. The reverse saturation current, which flows due to the thermally generated minority carriers, is very small compared to the forward current. 

Explanation

• The forward current of a diode is always significantly greater than its reverse saturation current. When a diode is forward-bias, it allows a substantial amount of current to flow, while in reverse bias, only a very small amount of reverse saturation current flows.
• This is due to the depletion region being much narrower in forward bias, allowing majority carriers to cross the junction easily. At the same time, it's wider in reverse bias, hindering the flow of majority carriers and allowing only minority carriers to contribute to the current.